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| IR2110 |
Description:
The
IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with
independent high and low side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction. Logic
inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use
in high frequency applications. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the
high side configuration
which operates up to 500 or 600 voltsContact Person:
No. Rek BCA 0612318610 a.n Muhammad Riyan Dinata
WA 085668050211
BBM 7d46d9bc
Hp 082177495750
Email m.riyandinata@mail.ugm.ac.id
Features
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Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
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Gate drive supply range from 10 to 20V
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Undervoltage lockout for both channels
•
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
•
CMOS Schmitt-triggered inputs with pull-down
•
Cycle by cycle edge-triggered shutdown logic
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Matched propagation delay for both channels
•
Outputs in phase with inputs
